O. Kondrat, R. Holomb, A. Csik, V. Takáts, M.Veres, V.Mitsa

Nanoscale Research Letters 12:149 (2017) 1-10, Impact factor²⁰¹⁷: 3.125

DOI: 10.1186/s11671-017-1918-y

Published: 27 February 2017

Independent citation: 4

Abstract

As _x S_100-x (x = 40, 45, 50) thin films top surface nanolayers affected by green (532 nm) diode laser illumination have been studied by high-resolution X-ray photoelectron spectroscopy, Raman spectroscopy, optical spectroscopy, and surface profilometry. It is shown that the composition of obtained films depends not only on the composition of the source material but as well on the composition of the vapor during the evaporation process. Near-bandgap laser light decreases both As–As and S–S homopolar bonds in films, obtained from thermal evaporation of the As₄₀S₆₀ and As₅₀S₅₀ glasses. Although As₄₅S₅₅ composition demonstrates increasing of As–As bonds despite to the partial disappearance of S–S bonds, for explanation of this phenomenon Raman investigations has also been performed. It is shown that As₄S₃ structural units (s.u.) responsible for the observed effect. Laser light induced surface topology of the As₄₅S₅₅ film has been recorded by 2D profilometer.