Kinetics of photo-darkening and -bleaching in amorphous As20Se80 layers: temperature dependence
Sándor Molnár, R. Bohdan, Viktor Takáts, Yu. Kaganovskii, Kálmán Vad, Sándor Kökényesi
J. Optoelectron. Adv. Mater. 20, 11/12, 646-650 (2018).
Published: November 2018
Photo-darkening (PD) and surface relief (SR) recording is applicable for fabrication of photonic elements in amorphous chalcogenides. While SR in As20Se80 layers was found very efficient, the influence of PD on recording and thermal stability need to be established. Thermally activated transient and reversible components of PD were detected. From temperature dependent characteristic times of recording and erasing for both PD components rather low activation energies (17 and 13 meV) for the recording process and high activation energies (210 and 90 meV) for erasing were determined. The mechanisms of relevant processes and stability of optical relief recording are discussed.