Molecular beam epitaxy (MBE) is an epitaxial method for the thin-film deposition of single crystals.

MBE is widely used in the manufacture of semiconductor devices, including transistors, and is considered an essential tool in the development of nanotechnologies. MBE is used in the manufacture of diodes and MOSFETs at the microwave frequency, as well as in the manufacture of lasers used to read optical discs. There are 4 Knudsen cells in the instrument, which is a source of particles used in micro- and nanotechnology to create the particle beam required for certain preparation processes. It can be used to generate and use vapors of low partial vapor pressure materials (eg Ga, Al, In, As).